ordering number : en8775a monolithic linear ic fan motor driver btl driver single-phase full-wave LA6583M overview the LA6583M is a low-saturation btl output linear driving moto r driver for single-phase bipolar fan motors. it features quite, low power, high efficiency drive that suppresses reactive current. it is optimal for use in applications that require miniaturization and low noise, such as cpu cooling fan motors and 5 to 12v electronic game products. features ? single-phase full-wave linear drive with btl output (gain resistance 1k-360k) : most appropriate for consumer appliances power supply and car audio system, namely equipment that requires silence because this has no switching noise. ? low-voltage operation possible, with wide operable voltage range (2.8 to 13.8v) ? low saturation output (upper + lower saturation voltage: v o sat (total) = 1.1vtyp, i o = 200ma) : high coil efficiency with lo w current drain. ic itself do es not generate much heat. ? lock protection and auto return circuits built-in ? lock protection signal output (l during rotation, h at stop; open collector output) ? fg output (rotation speed detection output: open collector output) ? hall bias built-in (vhb = 1.3v) ? heat protection circu it (design guarantee) : when the large current flows because of output shor t-circuit, raising the ic chip temperature above 180 c, the heat protection circuit suppresses the drive current, preventing ic burn and breakdown. ? compact and high heat capacity package specifications of any and all sanyo semiconductor co.,l td. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' sproductsor equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equ ipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medica l equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, t ransportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of re liability and can directly threaten human lives in case of failure or malfunction of the product or may cause har m to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for app lications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is n o consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 80509 sy / 32807 ti im b8-8575 no.8775-1/5
LA6583M no.8775-2/5 specifications maximum ratings at ta = 25 c parameter symbol conditions ratings unit supply voltage v cc max 15 v output current i out max 0.8 a output withstand voltage v out max 15 v rd/fg output withstand vrd/fg max 15 v rd/fg output current ird/fg max 5 ma hb output current ib max 10 ma allowable dissipation pd max mounted on a specified board *1 800 mw operating temperature topr *2 -30 to +90 c storage temperature tstg -55 to +150 c * 1: mounted on a specified board: 114.3mm 76.1mm 1.6mm glass epoxy * 2: tj = 150c use this ic within a range wher e the chip temperature do es not exceed tj = 150 c during operation. recommended operating conditions at ta = 25 c parameter symbol conditions ratings unit supply voltage v cc 2.8 to 14.0 v common-phase input voltage range of hall input vicm 0 to v cc -1.5 v electrical characteristics at ta = 25 c, v cc = 12.0v, unless especially specified. ratings parameter symbol conditions min typ max unit i cc 1 during drive (ct=l) 4 6 9 ma circuit current i cc 2 at lock protection (ct=h) 2 4 6 ma lock detection capacitor charge current ict1 2.0 2.8 3.5 a capacitor discharge current ict2 0.15 0.23 0.30 a capacitor charge/discharge current ratio rct rct=ict1/ict2 9 12 15 - ct charge voltage vct1 1.6 1.7 1.8 v ct discharge voltage vct2 0.6 0.7 0.8 v out output l saturation voltage v ol i o =200ma 0.2 0.3 v out output h saturation voltage v oh i o =200ma 0.9 1.2 v hall input sensitivity vhn zero peak value (including offset and hysteresis) 7 15 mv rd/fg output pin l voltage vrd/fg ird/fg=5ma 0.1 0.2 v rd/fg output pin leak current ird/fgl vrd/fg=15v 1 30 a hb output voltage vhb ihb=5ma 1.3 1.5 1.7 v thermal protection circuit tsd design target value *3 150 180 210 c * 3: this is a design guarantee value and no measurement with an independent unit is made. thermal protection circuit is built in this ic for the prevention of burnout of ic and thermal destruction. but, since the operation is outside the guarantee temperature range, thermal design must be made so that the thermal protection circuit is not activated during normal fan operation.
LA6583M package dimensions unit : mm (typ) 3086b no.8775-3/5 sanyo : mfp10s(225mil) 1 10 5 6 (0.5) 1.7max 1.0 0.35 5.0 0.15 6.4 (1.5) 0.1 4.4 0.63 -30 0 30 60 90 100 120 ila07057 0.2 0 0.4 0.6 0.32 0.8 1.0 pd max - ta allowable power dissipation, pd max - w ambient temperature, ta - c mounted on a specified board: 114.3mm 76.1mm 1.6mm, glass epoxy truth table in- in+ ct out1 out2 fg rd mode h l h l l l h l l h h l during rotation - - h off off - h lock protection pin assignment LA6583M gnd out1 ct hb in- rd fg in+ v cc out2 top view
LA6583M sample application circuit gnd v cc fg out1 out2 in+ in- hb *1 di cr *2 elements in substrate h r2 h r1 *3 in+ in- hb *5 rd *4 ct *1: when di to prevent breakdown in case of reverse connec tion is used, it is necessary to insert a capacitor cr to secure the regenerative current route. si milarly, cr is necessary to enhance th e reliability when ther e is no capacitor near the fan power line. *2: when the hall bias is taken from the hb pin, constant-voltage bias is made with about 1.3v. therefore, the hall output becomes the stable amplitude voltage satisfactory in temperature characteristics. by inserting r2 to obtain the hall bias from both v cc and hb, as shown in the figure, heat generation of ic can be suppressed. *3: in this ic, the hall output amplitude is amplified to produce the drive waveform. therefore, the switching time of the current application di rection is determined by the hall output, causing change in the characteristics of motor. if the hall element output amplitude is large, the start-up performance and efficiency of the ic are improved. on the other hand, if the hall element output amplitude is small, low-noise drive is ensured. adjust the hall element output amplitude by r1. *4: keep this open when this is not used. *5: when the wiring from the hall output to ic hall input is long, noise may be carried through the wiring. in this case, insert the capacitor as shown in the figure. no.8775-4/5
LA6583M internal equivalent circuit diagram h 1.5vrg out1 out2 hb v cc in+ in- gnd discharge pulse control circuit charge/discharge circuit ct=0.47 to 1 f sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rate d values (such as maximum ra tings, operating condition ranges, or other parameters) listed in products specif ications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-qual ity high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to acci dents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or e vents cannot occur. such measures include but are not limited to protective circuits and error prevention c ircuits for safe design, redundant design, and structural design. upon using the technical information or products descri bed herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable f or any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagr ams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equi pment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor c o.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities conc erned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any in formation storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of august, 2009. specifications and information herein are subject to change without notice. no.8775-5/5 ps
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